Nexperia Type N-Channel MOSFET, 10.3 A, 30 V, 4-Pin LFPAK56E PSMN2R0-55YLHX
- RS-artikelnummer:
- 240-1975
- Tillv. art.nr:
- PSMN2R0-55YLHX
- Tillverkare / varumärke:
- Nexperia
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
98,00 kr
(exkl. moms)
122,50 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 1 758 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 48 | 49,00 kr | 98,00 kr |
| 50 - 98 | 44,07 kr | 88,14 kr |
| 100 - 248 | 36,065 kr | 72,13 kr |
| 250 - 498 | 35,39 kr | 70,78 kr |
| 500 + | 30,855 kr | 61,71 kr |
*vägledande pris
- RS-artikelnummer:
- 240-1975
- Tillv. art.nr:
- PSMN2R0-55YLHX
- Tillverkare / varumärke:
- Nexperia
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | LFPAK56E | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 12.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type LFPAK56E | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 12.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Nexperia N-channel enhancement mode MOSFET is in LFPAK56E package. The ASFET is particularly suited to 36 V battery powered applications requiring strong avalanche capability, linear mode performance, use at high switching frequencies, and also safe a
Qualified to 175 °C
Avalanche rated, 100% tested
Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs
Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage
Narrow VGS(th) rating for easy paralleling and improved current sharing
Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions
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