Nexperia Type N-Channel MOSFET, 10.3 A, 30 V, 4-Pin LFPAK56E

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Antal (1 rulle med 1500 enheter)*

28 173,00 kr

(exkl. moms)

35 217,00 kr

(inkl. moms)

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  • Dessutom levereras 1 500 enhet(er) från den 29 december 2025
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1500 +18,782 kr28 173,00 kr

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RS-artikelnummer:
240-1974
Tillv. art.nr:
PSMN2R0-55YLHX
Tillverkare / varumärke:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10.3A

Maximum Drain Source Voltage Vds

30V

Package Type

LFPAK56E

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

13.6mΩ

Maximum Power Dissipation Pd

12.5W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Nexperia N-channel enhancement mode MOSFET is in LFPAK56E package. The ASFET is particularly suited to 36 V battery powered applications requiring strong avalanche capability, linear mode performance, use at high switching frequencies, and also safe a

Qualified to 175 °C

Avalanche rated, 100% tested

Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies

Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs

Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage

Narrow VGS(th) rating for easy paralleling and improved current sharing

Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions

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