Microchip VP2206 Type P-Channel MOSFET, 10.3 A, 650 V Enhancement, 3-Pin TO-92
- RS-artikelnummer:
- 239-5620
- Tillv. art.nr:
- VP2206N3-G
- Tillverkare / varumärke:
- Microchip
Antal (1 fack med 1000 enheter)*
18 950,00 kr
(exkl. moms)
23 690,00 kr
(inkl. moms)
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- Leverans från den 26 februari 2026
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Enheter | Per enhet | Per Bricka* |
|---|---|---|
| 1000 + | 18,95 kr | 18 950,00 kr |
*vägledande pris
- RS-artikelnummer:
- 239-5620
- Tillv. art.nr:
- VP2206N3-G
- Tillverkare / varumärke:
- Microchip
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.3A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-92 | |
| Series | VP2206 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 140W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.3A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-92 | ||
Series VP2206 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 140W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip VP2206 series are enhancement-mode (normally-off) transistors which utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. These vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
It has a Free from secondary breakdown
It has a Low power drive requirement
It offers an ease of paralleling, low CISS and fast switching speeds
It has high input impedance and high gain with excellent thermal stability
It has an integral source-to-drain diode
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