Vishay SiR Type N-Channel MOSFET, 171 A, 171 V, 8-Pin PowerPAK SO-8 SiRS700DP-T1-GE3
- RS-artikelnummer:
- 239-5396
- Tillv. art.nr:
- SiRS700DP-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
80,42 kr
(exkl. moms)
100,52 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Håller på att utgå
- Slutlig(a) 5 800 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 40,21 kr | 80,42 kr |
| 20 - 98 | 37,745 kr | 75,49 kr |
| 100 - 198 | 34,215 kr | 68,43 kr |
| 200 - 498 | 32,145 kr | 64,29 kr |
| 500 + | 30,185 kr | 60,37 kr |
*vägledande pris
- RS-artikelnummer:
- 239-5396
- Tillv. art.nr:
- SiRS700DP-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 171A | |
| Maximum Drain Source Voltage Vds | 171V | |
| Package Type | PowerPAK SO-8 | |
| Series | SiR | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0035Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 132W | |
| Typical Gate Charge Qg @ Vgs | 86nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6mm | |
| Width | 5 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 171A | ||
Maximum Drain Source Voltage Vds 171V | ||
Package Type PowerPAK SO-8 | ||
Series SiR | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0035Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 132W | ||
Typical Gate Charge Qg @ Vgs 86nC | ||
Maximum Operating Temperature 150°C | ||
Length 6mm | ||
Width 5 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay TrenchFET N channel power MOSFET has drain current of 171 A. It is used in synchronous rectification, primary side switch, DC/DC converter and motor drive switch.
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
100 % Rg and UIS tested
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