Toshiba Type N-Channel MOSFET, 168 A, 75 V, 8-Pin SOP TPH2R608NH,L1Q(M
- RS-artikelnummer:
- 236-3629
- Tillv. art.nr:
- TPH2R608NH,L1Q(M
- Tillverkare / varumärke:
- Toshiba
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
38,08 kr
(exkl. moms)
47,60 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 2 115 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 7,616 kr | 38,08 kr |
| 50 - 495 | 6,676 kr | 33,38 kr |
| 500 - 995 | 5,914 kr | 29,57 kr |
| 1000 - 2495 | 5,332 kr | 26,66 kr |
| 2500 + | 5,22 kr | 26,10 kr |
*vägledande pris
- RS-artikelnummer:
- 236-3629
- Tillv. art.nr:
- TPH2R608NH,L1Q(M
- Tillverkare / varumärke:
- Toshiba
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 168A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | SOP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6mm | |
| Height | 0.95mm | |
| Width | 5 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 168A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type SOP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 6mm | ||
Height 0.95mm | ||
Width 5 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Toshiba MOSFET made up of the silicon material and having N channel MOS type. It is mainly used in high efficiency DC-DC converters and switching voltage regulators applications.
High speed switching
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