Toshiba Type N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6 SSM6N7002KFU,LF(T
- RS-artikelnummer:
- 236-3582
- Tillv. art.nr:
- SSM6N7002KFU,LF(T
- Tillverkare / varumärke:
- Toshiba
Mängdrabatt möjlig
Antal (1 förpackning med 200 enheter)*
178,60 kr
(exkl. moms)
223,20 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 27 400 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 200 - 200 | 0,893 kr | 178,60 kr |
| 400 - 600 | 0,873 kr | 174,60 kr |
| 800 - 1000 | 0,857 kr | 171,40 kr |
| 1200 - 2800 | 0,802 kr | 160,40 kr |
| 3000 + | 0,731 kr | 146,20 kr |
*vägledande pris
- RS-artikelnummer:
- 236-3582
- Tillv. art.nr:
- SSM6N7002KFU,LF(T
- Tillverkare / varumärke:
- Toshiba
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | US6 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Maximum Power Dissipation Pd | 500mW | |
| Typical Gate Charge Qg @ Vgs | 0.39nC | |
| Forward Voltage Vf | -0.79V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.1mm | |
| Width | 2 mm | |
| Standards/Approvals | No | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type US6 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Maximum Power Dissipation Pd 500mW | ||
Typical Gate Charge Qg @ Vgs 0.39nC | ||
Forward Voltage Vf -0.79V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 2.1mm | ||
Width 2 mm | ||
Standards/Approvals No | ||
Height 0.9mm | ||
Automotive Standard No | ||
The Toshiba field effect transistor made up of the silicon material and having N channel MOS type. It is mainly used in high speed switching applications.
Storage temperature range −55 to 150 °C
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