Infineon ISP Type P-Channel MOSFET, 990 mA, 100 V Enhancement, 3-Pin SOT-223 ISP20EP10LMXTSA1

Se alla MOSFETs

Antal (1 rulle med 1000 enheter)*

1 251,00 kr

(exkl. moms)

1 564,00 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Tillfälligt slut
  • Leverans från den 25 maj 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per rulle*
1000 +1,251 kr1 251,00 kr

*vägledande pris

RS-artikelnummer:
235-4878
Tillv. art.nr:
ISP20EP10LMXTSA1
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

990mA

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-223

Series

ISP

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

3.5nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

4.2W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Height

6.7mm

Standards/Approvals

No

Width

1.8 mm

Length

7.3mm

Automotive Standard

No

The Infineon OptiMOS™ P-Channel MOSFETs 100V in SOT-223 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy Interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. It is used in Battery management, Industrial automation.

Ideal for high and low switching frequency

Avalanche ruggedness

Industry standard footprint surface mount package

Robust, reliable performance

Increased security of supply

relaterade länkar