Renesas Electronics BEAM Type N-Channel MOSFET, 50 A, 30 V Enhancement, 8-Pin WPAK RJK0391DPA-00#J5A

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RS-artikelnummer:
234-7152
Tillv. art.nr:
RJK0391DPA-00#J5A
Tillverkare / varumärke:
Renesas Electronics
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Brand

Renesas Electronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

30V

Package Type

WPAK

Series

BEAM

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0029Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

34nC

Maximum Power Dissipation Pd

50W

Maximum Operating Temperature

150°C

Standards/Approvals

Pb-Free, Halogen-Free

Height

0.85mm

Length

6.1mm

Width

5.9 mm

Automotive Standard

No

The Renesas Electronics N-channel single power MOSFET suitable for switching and load switch applications. It has high breakdown voltage of 30 V. It is capable of 4.5 V gate drive.

High speed switching

Low drive current

High density mounting

Low on-resistance

Pb-free

Halogen-free

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