N-Channel MOSFET, 193 A, 40 V, 8-Pin TDSON-8 FL Infineon ISC017N04NM5ATMA1

The Infineon OptiMOS 5 power transistor N-channel MOSFET has 40V drain source breakdown voltage and 193A continuous drain current. This product offers a benchmark solution for applications requiring normal level (higher threshold voltage) drive capability. The high Vth in the normal level portfolio offers immunity to false turn-on due to noisy environments. In addition, lower QGD/QGS ratios reduce the peak of the gate voltage spikes, further contributing to the robustness against unwanted turn-on.

Battery powered application
LV motor drives
Very low on-resistanceRDS(on)
100% avalanche tested
175°C junction temperature
Superior thermal resistance
Low gate charge
Reduced switching losses
Suitable for operation at higher frequencies
N-channel
Pb-free lead plating
RoHS compliant
Halogen-free according to IEC61249-2-21