Infineon ISC Type N-Channel MOSFET, 193 A, 40 V, 8-Pin TDSON-8 FL ISC017N04NM5ATMA1

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24 355,00 kr

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30 445,00 kr

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RS-artikelnummer:
234-6994
Tillv. art.nr:
ISC017N04NM5ATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

193A

Maximum Drain Source Voltage Vds

40V

Package Type

TDSON-8 FL

Series

ISC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.7mΩ

Maximum Power Dissipation Pd

115W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

67nC

Maximum Operating Temperature

175°C

Length

4.4mm

Width

1.1 mm

Height

3.8mm

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS 5 power transistor N-channel MOSFET has 40V drain source breakdown voltage and 193A continuous drain current. This product offers a Benchmark solution for applications requiring normal level (higher threshold voltage) drive capability. The high Vth in the normal level portfolio offers immunity to false turn-on due to noisy environments. In addition, lower QGD/QGS ratios reduce the Peak of the gate voltage spikes, further contributing to the robustness against unwanted turn-on.

Battery powered application

LV motor drives

Very low on-resistanceRDS(on)

100% avalanche tested

175°C junction temperature

Superior thermal resistance

Low gate charge

Reduced switching losses

Suitable for operation at higher frequencies

N-channel

Pb-free lead plating

RoHS compliant

Halogen-free according to IEC61249-2-21

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