Infineon ISC Type N-Channel Power Transistor, 170 A, 120 V Enhancement, 8-Pin PG-TDSON-8 FL ISC032N12LM6ATMA1

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97,71 kr

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122,138 kr

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2 - 1848,855 kr97,71 kr
20 - 19844,015 kr88,03 kr
200 - 99840,545 kr81,09 kr
1000 - 199837,69 kr75,38 kr
2000 +33,71 kr67,42 kr

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RS-artikelnummer:
349-139
Tillv. art.nr:
ISC032N12LM6ATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

170A

Maximum Drain Source Voltage Vds

120V

Series

ISC

Package Type

PG-TDSON-8 FL

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

211W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

33nC

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249-2-21, JEDEC, RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon OptiMOS 6 Power Transistor is an N-channel, logic level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), which reduces conduction losses and improves performance. The transistor boasts an excellent gate charge x RDS(on) product (FOM), ensuring optimal switching characteristics. Additionally, it offers very low reverse recovery charge (Qrr), minimizing switching losses.

Optimized for high frequency switching and synchronous rectification

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249-2-21

MSL 1 classified according to J-STD-020

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