Infineon ISC Type N-Channel Power Transistor, 170 A, 120 V Enhancement, 8-Pin PG-TDSON-8 FL ISC032N12LM6ATMA1
- RS-artikelnummer:
- 349-139
- Tillv. art.nr:
- ISC032N12LM6ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
97,71 kr
(exkl. moms)
122,138 kr
(inkl. moms)
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- Dessutom levereras 5 000 enhet(er) från den 19 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 48,855 kr | 97,71 kr |
| 20 - 198 | 44,015 kr | 88,03 kr |
| 200 - 998 | 40,545 kr | 81,09 kr |
| 1000 - 1998 | 37,69 kr | 75,38 kr |
| 2000 + | 33,71 kr | 67,42 kr |
*vägledande pris
- RS-artikelnummer:
- 349-139
- Tillv. art.nr:
- ISC032N12LM6ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 170A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | PG-TDSON-8 FL | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 211W | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 170A | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type PG-TDSON-8 FL | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 211W | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon OptiMOS 6 Power Transistor is an N-channel, logic level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), which reduces conduction losses and improves performance. The transistor boasts an excellent gate charge x RDS(on) product (FOM), ensuring optimal switching characteristics. Additionally, it offers very low reverse recovery charge (Qrr), minimizing switching losses.
Optimized for high frequency switching and synchronous rectification
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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