Infineon BSZ Type N-Channel MOSFET, 40 A, 100 V N, 8-Pin TSDSON-8 FL BSZ0804LSATMA1
- RS-artikelnummer:
- 234-6993
- Tillv. art.nr:
- BSZ0804LSATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
82,14 kr
(exkl. moms)
102,675 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 1 535 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 16,428 kr | 82,14 kr |
| 50 - 120 | 14,448 kr | 72,24 kr |
| 125 - 245 | 13,62 kr | 68,10 kr |
| 250 - 495 | 12,634 kr | 63,17 kr |
| 500 + | 11,648 kr | 58,24 kr |
*vägledande pris
- RS-artikelnummer:
- 234-6993
- Tillv. art.nr:
- BSZ0804LSATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TSDSON-8 FL | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.5mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5.35mm | |
| Width | 6.1 mm | |
| Height | 1.2mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TSDSON-8 FL | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.5mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5.35mm | ||
Width 6.1 mm | ||
Height 1.2mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ PD N-channel power MOSFET targets USB-PD and adapter applications. The product offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction and features quality products in compact, lightweight packages. It has 40A maximum continuous drain current and 100V maximum drain source voltage It is Ideal for high-frequency switching and optimized for chargers.
Logic level availability
Low on-state resistance RDS(on)
Low gate, output and reverse recovery charge
Excellent thermal behaviour
100% avalanche tested
Pb-free lead plating
Halogen-freeaccordingtoIEC61249-2-21
RoHS compliant
Available in 2 small standard packages
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