Infineon BSZ Type N-Channel MOSFET, 40 A, 100 V N, 8-Pin TSDSON-8 FL BSZ0803LSATMA1
- RS-artikelnummer:
- 234-6991
- Tillv. art.nr:
- BSZ0803LSATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
76,14 kr
(exkl. moms)
95,175 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 4 995 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 15,228 kr | 76,14 kr |
| 50 - 120 | 14,492 kr | 72,46 kr |
| 125 - 245 | 13,574 kr | 67,87 kr |
| 250 - 495 | 12,634 kr | 63,17 kr |
| 500 + | 11,716 kr | 58,58 kr |
*vägledande pris
- RS-artikelnummer:
- 234-6991
- Tillv. art.nr:
- BSZ0803LSATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | BSZ | |
| Package Type | TSDSON-8 FL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20.8mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7.6nC | |
| Maximum Power Dissipation Pd | 52W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.2mm | |
| Standards/Approvals | No | |
| Length | 5.35mm | |
| Width | 6.1 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series BSZ | ||
Package Type TSDSON-8 FL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20.8mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7.6nC | ||
Maximum Power Dissipation Pd 52W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.2mm | ||
Standards/Approvals No | ||
Length 5.35mm | ||
Width 6.1 mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ PD N-channel power MOSFET targets USB-PD and adapter applications. The product offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction and features quality products in compact, lightweight packages. It has 40A maximum continuous drain current and 100V maximum drain source voltage It is Ideal for high-frequency switching and optimized for chargers.
Logic level availability
Low on-state resistance RDS(on)
Low gate, output and reverse recovery charge
Excellent thermal behaviour
100% avalanche tested
Pb-free lead plating
Halogen-freeaccordingtoIEC61249-2-21
RoHS compliant
Available in 2 small standard packages
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