Infineon OptiMOS 5 Type N-Channel MOSFET, 58 A, 100 V, 8-Pin PQFN ISZ0804NLSATMA1
- RS-artikelnummer:
- 232-6778
- Tillv. art.nr:
- ISZ0804NLSATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
86,52 kr
(exkl. moms)
108,15 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 4 915 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 17,304 kr | 86,52 kr |
| 50 - 120 | 15,59 kr | 77,95 kr |
| 125 - 245 | 14,516 kr | 72,58 kr |
| 250 - 495 | 13,53 kr | 67,65 kr |
| 500 + | 12,454 kr | 62,27 kr |
*vägledande pris
- RS-artikelnummer:
- 232-6778
- Tillv. art.nr:
- ISZ0804NLSATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PQFN | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15.5mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 60W | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Height | 3.4mm | |
| Width | 1.1 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PQFN | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15.5mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 60W | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Height 3.4mm | ||
Width 1.1 mm | ||
Automotive Standard No | ||
The Infineon's OptiMOS PD power MOSFET 100 V, are designed targeting USB-PD and adapter applications. It's PQFN 3.3x3.3 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.
Logic level availability
Excellent thermal behaviour
100% avalanche tested
relaterade länkar
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V, 8-Pin PQFN
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V N, 8-Pin PQFN
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V N, 8-Pin PQFN BSZ096N10LS5ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 40 V N, 8-Pin PQFN
- Infineon OptiMOS Type N-Channel MOSFET 40 V N, 8-Pin PQFN BSZ034N04LSATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V, 8-Pin PQFN
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 8-Pin PQFN
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V, 8-Pin PQFN ISZ0803NLSATMA1