Infineon CoolSiC Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-247

Se alla MOSFETs
Mängdrabatt möjlig

Antal (1 rör med 30 enheter)*

2 821,05 kr

(exkl. moms)

3 526,32 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Tillfälligt slut
  • Leverans från den 03 juli 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per Rør*
30 - 3094,035 kr2 821,05 kr
60 - 6089,335 kr2 680,05 kr
90 +83,69 kr2 510,70 kr

*vägledande pris

RS-artikelnummer:
232-0392
Tillv. art.nr:
IMW65R057M1HXKSA1
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

650V

Series

CoolSiC

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

74mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon has SiC MOSFET delivering reliable and cost-effective performance in TO247 3-pin package. The CoolSiC MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device’s performance, robustness, and ease of use. The MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation.

Low capacitances

Optimized switching behaviour at higher currents

Superior gate oxide reliability

Excellent thermal behaviour

Increased avalanche capability

Works with standard drivers

relaterade länkar