Infineon CoolSiC Type N-Channel MOSFET, 59 A, 650 V Enhancement, 4-Pin TO-247

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Antal (1 rör med 30 enheter)*

4 061,91 kr

(exkl. moms)

5 077,38 kr

(inkl. moms)

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  • Dessutom levereras 90 enhet(er) från den 26 december 2025
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Enheter
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Per Rør*
30 - 30135,397 kr4 061,91 kr
60 - 60128,628 kr3 858,84 kr
90 +120,505 kr3 615,15 kr

*vägledande pris

RS-artikelnummer:
232-0400
Tillv. art.nr:
IMZA65R027M1HXKSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

59A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

CoolSiC

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

34mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon has SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package. The 650 V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Its suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency. MOSFET in TO247 4-pin package reduces parasitic source inductance effects on the gate circuit enabling faster switching and increased efficiency.

Low capacitances

Optimized switching behaviour at higher currents

Superior gate oxide reliability

Excellent thermal behaviour

Increased avalanche capability

Works with standard driver

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