onsemi NTMFS Type N-Channel MOSFET, 61 A, 80 V N, 8-Pin DFN NTMFSC010N08M7
- RS-artikelnummer:
- 229-6475
- Tillv. art.nr:
- NTMFSC010N08M7
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
89,26 kr
(exkl. moms)
111,575 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 2 985 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 17,852 kr | 89,26 kr |
| 50 - 95 | 15,366 kr | 76,83 kr |
| 100 - 495 | 13,328 kr | 66,64 kr |
| 500 - 995 | 11,716 kr | 58,58 kr |
| 1000 + | 10,662 kr | 53,31 kr |
*vägledande pris
- RS-artikelnummer:
- 229-6475
- Tillv. art.nr:
- NTMFSC010N08M7
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 61A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFN | |
| Series | NTMFS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Power Dissipation Pd | 78.1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.1mm | |
| Standards/Approvals | No | |
| Length | 6.25mm | |
| Width | 0.95 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 61A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFN | ||
Series NTMFS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Power Dissipation Pd 78.1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 5.1mm | ||
Standards/Approvals No | ||
Length 6.25mm | ||
Width 0.95 mm | ||
Automotive Standard No | ||
The ON Semiconductor N-Channel MOSFET is produced using an advanced power trench process. advancements in both silicon and dual cool package technologies have been combined to offer the lowest on state resistance while maintaining excellent switching performance by extremely low junction to ambient thermal resistance.
Improved package thermal capability
Reduces conduction loss
Improved system efficiency
Package material comply with latest requirements
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