Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	61A
	Maximum Drain Source Voltage Vds	80V
	Package Type	DFN
	Series	NTMFS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	10mΩ
	Channel Mode	N
	Typical Gate Charge Qg @ Vgs	38nC
	Maximum Power Dissipation Pd	78.1W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	6.25mm
	Height	5.1mm
	Width	0.95 mm
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 61A
	Maximum Drain Source Voltage Vds 80V
	Package Type DFN
	Series NTMFS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 10mΩ
	Channel Mode N
	Typical Gate Charge Qg @ Vgs 38nC
	Maximum Power Dissipation Pd 78.1W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 6.25mm
	Height 5.1mm
	Width 0.95 mm
	Automotive Standard No

Datasheet - NTMFSC010N08M7

The ON Semiconductor N-Channel MOSFET is produced using an advanced power trench process. advancements in both silicon and dual cool package technologies have been combined to offer the lowest on state resistance while maintaining excellent switching performance by extremely low junction to ambient thermal resistance.

Improved package thermal capability

Reduces conduction loss

Improved system efficiency

Package material comply with latest requirements

onsemi NTMFS Type N-Channel MOSFET, 61 A, 80 V N, 8-Pin DFN

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