onsemi SiC Power Type N-Channel MOSFET, 145 A, 650 V N, 7-Pin TO-263 NTBG015N065SC1
- RS-artikelnummer:
- 229-6442
- Tillv. art.nr:
- NTBG015N065SC1
- Tillverkare / varumärke:
- onsemi
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 252,67 kr |
| 10 - 99 | 217,84 kr |
| 100 + | 188,83 kr |
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- RS-artikelnummer:
- 229-6442
- Tillv. art.nr:
- NTBG015N065SC1
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 145A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | SiC Power | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 283nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 500W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.8V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.2mm | |
| Width | 4.7 mm | |
| Height | 9.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 145A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series SiC Power | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 283nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 500W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.8V | ||
Maximum Operating Temperature 175°C | ||
Length 10.2mm | ||
Width 4.7 mm | ||
Height 9.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
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