Infineon IPZ Type N-Channel MOSFET, 40 A, 40 V Enhancement, 8-Pin PQFN IPZ40N04S55R4ATMA1
- RS-artikelnummer:
- 229-1852
- Tillv. art.nr:
- IPZ40N04S55R4ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 15 enheter)*
106,59 kr
(exkl. moms)
133,23 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 4 500 enhet(er) från den 01 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 15 - 60 | 7,106 kr | 106,59 kr |
| 75 - 135 | 6,75 kr | 101,25 kr |
| 150 - 360 | 6,466 kr | 96,99 kr |
| 375 - 735 | 6,183 kr | 92,75 kr |
| 750 + | 5,757 kr | 86,36 kr |
*vägledande pris
- RS-artikelnummer:
- 229-1852
- Tillv. art.nr:
- IPZ40N04S55R4ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPZ | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 48W | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.05mm | |
| Length | 3.3mm | |
| Width | 3.3 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPZ | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 48W | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 1.05mm | ||
Length 3.3mm | ||
Width 3.3 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon n channel normal level MOSFET used for automotive applications. It has 175°C operating temperature and 100 percent avalanche tested.
It is RoHS compliant and AEC Q101 qualified
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