Infineon IPP Type P-Channel MOSFET, 120 A, 40 V Enhancement, 3-Pin TO-220

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1 990,25 kr

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RS-artikelnummer:
229-1846
Tillv. art.nr:
IPP120P04P4L03AKSA2
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

40V

Series

IPP

Package Type

TO-220

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.4mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

5 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

180nC

Maximum Power Dissipation Pd

136W

Forward Voltage Vf

-1.3V

Maximum Operating Temperature

175°C

Width

15.95 mm

Length

15.65mm

Height

2.54mm

Standards/Approvals

No

Automotive Standard

AEC

Infineon Series IPP MOSFET, 120A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IPP120P04P4L03AKSA2


This silicon MOSFET is designed for high performance within various applications. The component features a TO-220 package that enhances its capability for effective thermal dissipation. With a maximum continuous drain current of 120A and a drain-source voltage of 40V, it offers excellent operational flexibility in demanding environments. The MOSFET operates efficiently across a wide temperature range, making it suitable for automotive and industrial applications.

Features & Benefits


• P-channel enhancement mode ensures efficient switching performance

• AEC qualified, meeting rigorous automotive standards

• Maximum operating temperature of +175°C allows for demanding requirement

• MSL1 rating supports high-temperature reflow processes

Applications


• Used in automotive control systems for efficient power management

• Effective for electric motor drive in robotics

• Incorporated into power supply circuits in industrial machinery

• Suitable for consumer electronics where compact size is essential

What is the significance of the maximum continuous drain current rating?


The maximum continuous drain current rating indicates the highest amount of current the device can handle under normal operating conditions, which is essential for ensuring reliability in applications demanding high current capacity.

How does the low Rds(on) contribute to power efficiency?


A low Rds(on) reduces power losses during operation, allowing devices to run cooler and enhancing overall system energy efficiency, which is particularly beneficial in battery-operated designs.

What safety features does this component offer for harsh environments?


This device is 100% avalanche tested, ensuring it can withstand transient conditions without failure, which is crucial for protecting circuits in unpredictable environments such as automotive and industrial applications.

What performance characteristics should one consider when integrating this component into existing systems?


Key characteristics like gate threshold voltage, maximum gate-source voltage, and thermal resistance should be evaluated to ensure compatibility with existing circuit designs and to optimise performance.

How does the operating temperature range enhance its usability in different applications?


With an operating temperature range from -55°C to +175°C, this MOSFET is versatile enough for use across a broad spectrum of applications, from extreme cold environments to high-temperature operational settings.

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