Vishay E Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-247

Mängdrabatt möjlig

Antal (1 rör med 25 enheter)*

872,70 kr

(exkl. moms)

1 090,875 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Sista RS lager
  • Slutlig(a) 425 enhet(er), redo att levereras
Enheter
Per enhet
Per Rør*
25 - 2534,908 kr872,70 kr
50 - 10034,209 kr855,23 kr
125 +32,466 kr811,65 kr

*vägledande pris

RS-artikelnummer:
228-2863
Tillv. art.nr:
SiHG080N60E-GE3
Tillverkare / varumärke:
Vishay
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

42nC

Maximum Power Dissipation Pd

227W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

relaterade länkar