Vishay E Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-220 SiHF080N60E-GE3
- RS-artikelnummer:
- 228-2854
- Tillv. art.nr:
- SiHF080N60E-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
72,02 kr
(exkl. moms)
90,02 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 928 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 36,01 kr | 72,02 kr |
| 20 - 48 | 32,37 kr | 64,74 kr |
| 50 - 98 | 30,63 kr | 61,26 kr |
| 100 - 198 | 28,785 kr | 57,57 kr |
| 200 + | 26,655 kr | 53,31 kr |
*vägledande pris
- RS-artikelnummer:
- 228-2854
- Tillv. art.nr:
- SiHF080N60E-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Power Dissipation Pd | 35W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Power Dissipation Pd 35W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
relaterade länkar
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SiHP080N60E-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SIHP690N60E-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SiHA690N60E-GE3
- Vishay SIHF Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SIHF074N65E-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
