Vishay E Type N-Channel MOSFET, 4.3 A, 650 V Enhancement, 3-Pin TO-220
- RS-artikelnummer:
- 200-6807
- Tillv. art.nr:
- SiHA690N60E-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
422,25 kr
(exkl. moms)
527,75 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 08 maj 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 100 | 16,89 kr | 422,25 kr |
| 125 - 225 | 16,388 kr | 409,70 kr |
| 250 - 600 | 15,868 kr | 396,70 kr |
| 625 - 1225 | 15,313 kr | 382,83 kr |
| 1250 + | 14,918 kr | 372,95 kr |
*vägledande pris
- RS-artikelnummer:
- 200-6807
- Tillv. art.nr:
- SiHA690N60E-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.3A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Power Dissipation Pd | 29W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.3mm | |
| Standards/Approvals | No | |
| Height | 13.8mm | |
| Width | 4.7 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.3A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Power Dissipation Pd 29W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Length 10.3mm | ||
Standards/Approvals No | ||
Height 13.8mm | ||
Width 4.7 mm | ||
Automotive Standard No | ||
The Vishay SiHA690N60E-GE3 is a E Series power MOSFET.
4th generation E series technology
Low figure-of-merit
Low effective capacitance
Reduced switching and conduction losses
Avalanche energy rated (UIS)
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