Vishay N-Channel 100 V Type N-Channel MOSFET, 150 A, 100 V, 3-Pin TO-263 SUM70042E-GE3
- RS-artikelnummer:
- 225-9970
- Tillv. art.nr:
- SUM70042E-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
171,36 kr
(exkl. moms)
214,20 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 500 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 34,272 kr | 171,36 kr |
| 50 - 120 | 30,868 kr | 154,34 kr |
| 125 - 245 | 29,142 kr | 145,71 kr |
| 250 - 495 | 27,44 kr | 137,20 kr |
| 500 + | 25,402 kr | 127,01 kr |
*vägledande pris
- RS-artikelnummer:
- 225-9970
- Tillv. art.nr:
- SUM70042E-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | N-Channel 100 V | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 278W | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 84nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.826mm | |
| Length | 15.875mm | |
| Width | 10.414 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series N-Channel 100 V | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 278W | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 84nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 4.826mm | ||
Length 15.875mm | ||
Width 10.414 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
TrenchFET power MOSFET
Maximum 175 °C junction temperature
Very low Qgd reduces power loss from passing through V(plateau)
100 % Rg and UIS tested
relaterade länkar
- Vishay N-Channel 100 V Type N-Channel MOSFET 100 V, 3-Pin TO-263
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 7-Pin TO-263 SUM70030M-GE3
- Vishay SUM Type N-Channel MOSFET 100 V Enhancement, 7-Pin TO-263-7L SUM70042M-GE3
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 7-Pin TO-263
- Vishay N-Channel 100 V Type N-Channel MOSFET 100 V, 3-Pin TO-220 SUP70042E-GE3
- Vishay SUM60020E Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-263 SUM60020E-GE3
- Vishay TrenchFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 SUM90100E-GE3
- Vishay SUM40012EL Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-263 SUM40012EL-GE3