Infineon BSS123I Type N-Channel MOSFET, 190 mA, 100 V Depletion, 4-Pin SOT-223

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1 284,00 kr

(exkl. moms)

1 605,00 kr

(inkl. moms)

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  • Dessutom levereras 3 000 enhet(er) från den 29 december 2025
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3000 - 30000,428 kr1 284,00 kr
6000 - 120000,407 kr1 221,00 kr
15000 +0,39 kr1 170,00 kr

*vägledande pris

RS-artikelnummer:
225-0556
Tillv. art.nr:
BSS123IXTSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

190mA

Maximum Drain Source Voltage Vds

100V

Series

BSS123I

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

10Ω

Channel Mode

Depletion

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

0.63nC

Maximum Power Dissipation Pd

0.5W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Length

6.7mm

Height

1.8mm

Width

3.7 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon BSS123I is the small signal, small power N- and P-channel MOSFETs provide a wide range of VGS(th) levels and RDS(on) values, as well as multiple voltage classes. This MOSFET have enhancement and depletion-mode options.

PCB-space and cost savings

Gate drive flexibility

Reduced design complexity

Environmentally friendly

High overall efficiency

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