Infineon IPN70R Type N-Channel MOSFET, 3 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R2K0P7SATMA1

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RS-artikelnummer:
222-4922
Tillv. art.nr:
IPN70R2K0P7SATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

700V

Series

IPN70R

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

3.8nC

Maximum Power Dissipation Pd

6W

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

16 V

Maximum Operating Temperature

150°C

Length

6.7mm

Width

3.7 mm

Standards/Approvals

No

Height

1.8mm

Automotive Standard

No

The Infineon CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.

Enabling lower MOSFET chip temperature

Leading to higher efficency compared to previous technologies

Allowing improved form factors and slim designs

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