Infineon IMW1 Type N-Channel MOSFET, 4.7 A, 1200 V Enhancement, 3-Pin TO-247 IMW120R350M1HXKSA1
- RS-artikelnummer:
- 222-4861
- Tillv. art.nr:
- IMW120R350M1HXKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
95,52 kr
(exkl. moms)
119,40 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 25 maj 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 47,76 kr | 95,52 kr |
| 20 - 48 | 43,01 kr | 86,02 kr |
| 50 - 98 | 40,15 kr | 80,30 kr |
| 100 - 198 | 37,745 kr | 75,49 kr |
| 200 + | 34,83 kr | 69,66 kr |
*vägledande pris
- RS-artikelnummer:
- 222-4861
- Tillv. art.nr:
- IMW120R350M1HXKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.7A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | IMW1 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 350mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.7A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series IMW1 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 350mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolSiC™ 1200 V, 350 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.
Best in class switching and conduction losses
Benchmark high threshold voltage, Vth > 4 V
0V turn-off gate voltage for easy and simple gate drive
Wide gate-source voltage range
Robust and low loss body diode rated for hard commutation
Temperature independent turn-off switching losses
relaterade länkar
- Infineon IMW1 Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247
- Infineon IMW1 Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247
- Infineon IMW1 Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247
- Infineon IMW1 Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247 IMW120R060M1HXKSA1
- Infineon IMW1 Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247 IMW120R220M1HXKSA1
- Infineon IMZ1 Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- Infineon IMZ1 Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247 IMZ120R350M1HXKSA1
- Infineon IMW1 Type N-Channel MOSFET 1700 V Enhancement, 3-Pin TO-247