Infineon IMW1 Type N-Channel MOSFET, 4.7 A, 1200 V Enhancement, 3-Pin TO-247

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883,02 kr

(exkl. moms)

1 103,76 kr

(inkl. moms)

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30 +29,434 kr883,02 kr

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RS-artikelnummer:
222-4859
Tillv. art.nr:
IMW120R350M1HXKSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.7A

Maximum Drain Source Voltage Vds

1200V

Series

IMW1

Package Type

TO-247

Pin Count

3

Maximum Drain Source Resistance Rds

350mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolSiC™ 1200 V, 350 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.

Best in class switching and conduction losses

Benchmark high threshold voltage, Vth > 4 V

0V turn-off gate voltage for easy and simple gate drive

Wide gate-source voltage range

Robust and low loss body diode rated for hard commutation

Temperature independent turn-off switching losses

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