Infineon HEXFET Type N-Channel MOSFET, 56 A, 55 V Enhancement, 3-Pin TO-252

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12 458,00 kr

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15 572,00 kr

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RS-artikelnummer:
222-4750
Tillv. art.nr:
IRFR2405TRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

160kΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

110W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

110nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

2.39 mm

Standards/Approvals

No

Length

6.73mm

Height

6.22mm

Automotive Standard

No

The Infineon design of HEXFET® Power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Dynamic dv/dt Rating

Fast Switching

Fully Avalanche Rated

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