Infineon Dual OptiMOS 2 Type N-Channel MOSFET, 5 A, 55 V Enhancement, 8-Pin DSO

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26 402,50 kr

(exkl. moms)

33 002,50 kr

(inkl. moms)

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2500 +10,561 kr26 402,50 kr

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RS-artikelnummer:
222-4623
Tillv. art.nr:
BSO604NS2XUMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

55V

Series

OptiMOS

Package Type

DSO

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

35mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

19.7nC

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Height

1.47mm

Standards/Approvals

No

Length

4.9mm

Width

3.94 mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Logic level

Enhancement Mode Green Product (RoHS compliant)

AEC Qualified

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