Infineon HEXFET Type P-Channel MOSFET & Diode, 5.6 A, 20 V Enhancement, 2-Pin TO-263

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4 611,00 kr

(exkl. moms)

5 763,00 kr

(inkl. moms)

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3000 - 30001,537 kr4 611,00 kr
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RS-artikelnummer:
220-7500
Tillv. art.nr:
IRLMS6802TRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET & Diode

Channel Type

Type P

Maximum Continuous Drain Current Id

5.6A

Maximum Drain Source Voltage Vds

20V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

2

Maximum Drain Source Resistance Rds

50mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2W

Typical Gate Charge Qg @ Vgs

16nC

Maximum Operating Temperature

175°C

Length

3mm

Width

1 mm

Height

3mm

Standards/Approvals

No

Automotive Standard

No

The Infineon P-Channel MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6 package with its customized lead frame produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. The unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.

Ultra Low On-Resistance

P-Channel MOSFET

Surface Mount

Available in Tape & Reel

Lead-Free

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