Infineon StrongIRFET Type N-Channel MOSFET & Diode, 363 A, 60 V Enhancement, 7-Pin TO-263

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18 051,20 kr

(exkl. moms)

22 564,00 kr

(inkl. moms)

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800 +22,564 kr18 051,20 kr

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RS-artikelnummer:
220-7471
Tillv. art.nr:
IRF60SC241ARMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

363A

Maximum Drain Source Voltage Vds

60V

Series

StrongIRFET

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

0.95mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

311nC

Maximum Power Dissipation Pd

2.4W

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

9.45 mm

Standards/Approvals

No

Height

4.4mm

Length

10.2mm

Automotive Standard

No

The Infineon latest 60 V Strong IRFET power MOSFET devices are optimized for both high current and low RDS(on) making them the ideal solution for high current battery powered applications.

Low RDS(on)

High current capability

Industry standard package

Flexible pinout

Optimized for 10 V gate drive

Reduction in conduction losses

Increased power density

Drop in replacement to existing devices

Offers design flexibility

Provides immunity to false turn-on in noisy environments

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