Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 151 A, 650 V Enhancement, 4-Pin TO-247

RS-artikelnummer:: 220-7465
Tillv. art.nr:: IPZA60R060P7XKSA1
Tillverkare / varumärke:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 151 A, 650 V Enhancement, 4-Pin TO-247

Mängdrabatt möjlig

Antal (1 rör med 30 enheter)*

1 637,10 kr

(exkl. moms)

2 046,30 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Tillfälligt slut

Leverans från den 02 oktober 2026

Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"

Enheter	Per enhet	Per Rør*
30 - 30	54,57 kr	1 637,10 kr
60 - 120	51,841 kr	1 555,23 kr
150 +	49,657 kr	1 489,71 kr

*vägledande pris

RS-artikelnummer:: 220-7465
Tillv. art.nr:: IPZA60R060P7XKSA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	151A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Series	CoolMOS P7
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	67nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	164W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Height	21.1mm
	Standards/Approvals	No
	Width	5.1 mm
	Length	15.9mm
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 151A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Series CoolMOS P7
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 67nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 164W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Height 21.1mm
	Standards/Approvals No
	Width 5.1 mm
	Length 15.9mm
	Automotive Standard No

Datasheet - IPZA60R060P7XKSA1

The Infineon 600V Cool MOS P7 super junction MOSFET is the successor to the 600V Cool MOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS 7th generation platform ensure its high efficiency.

600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor RG

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency

Ease-of-use in manufacturing environments by stopping ESD failures occurring

Integrated RG reduces MOSFET oscillation sensitivity

MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC

Excellent ruggedness during hard commutation of the body diode seen in LLC topology

Suitable for a wide variety of end applications and output powers

Parts available suitable for consumer and industrial applications

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 151 A, 650 V Enhancement, 4-Pin TO-247

GRATIS leverans för online beställningar över 500,00 kr

relaterade länkar