Infineon CoolMOS P7 Type N-Channel MOSFET, 26 A, 650 V Enhancement, 3-Pin TO-247
- RS-artikelnummer:
- 219-5980
- Tillv. art.nr:
- IPA60R360P7XKSA1
- Tillverkare / varumärke:
- Infineon
Antal (1 rör med 50 enheter)*
290,10 kr
(exkl. moms)
362,60 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- 600 enhet(er) levereras från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 + | 5,802 kr | 290,10 kr |
*vägledande pris
- RS-artikelnummer:
- 219-5980
- Tillv. art.nr:
- IPA60R360P7XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS P7 | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS P7 | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMO P7 optimized superjunction MOSFETs merging high energy efficiency with ease-of-use is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS 7th generation platform ensure its high efficiency.
MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
Excellent ruggedness during hard commutation of the body diode seen in LLC topology
Suitable for a wide variety of end applications and output powers
Parts available suitable for consumer and industrial applications
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