Infineon CoolMOS Type N-Channel MOSFET & Diode, 97 A, 650 V Enhancement, 5-Pin VSON IPL60R095CFD7AUMA1
- RS-artikelnummer:
- 220-7431
- Tillv. art.nr:
- IPL60R095CFD7AUMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
96,67 kr
(exkl. moms)
120,838 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- 3 000 enhet(er) levereras från den 14 maj 2026
- Dessutom levereras 3 000 enhet(er) från den 21 maj 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 8 | 48,335 kr | 96,67 kr |
| 10 - 18 | 39,09 kr | 78,18 kr |
| 20 - 48 | 36,735 kr | 73,47 kr |
| 50 - 98 | 34,33 kr | 68,66 kr |
| 100 + | 31,92 kr | 63,84 kr |
*vägledande pris
- RS-artikelnummer:
- 220-7431
- Tillv. art.nr:
- IPL60R095CFD7AUMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 97A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS | |
| Package Type | VSON | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 147W | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Width | 8.1 mm | |
| Length | 8.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 97A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS | ||
Package Type VSON | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 147W | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Width 8.1 mm | ||
Length 8.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V Cool MOS CFD7 is Infineon’s latest high voltage super junction MOSFET technology with integrated fast body diode, completing the Cool MOS 7 series. Cool MOS CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM RDS(on) x Qg and Eoss
Best-in-class RDS(on)/package combinations
Best-in-class hard commutation ruggedness
Highest reliability for resonant topologies
Highest efficiency with outstanding ease-of-use/performance trade-off
Enabling increased power density solutions
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