Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 120 A, 80 V Enhancement, 3-Pin TO-263 IPB031N08N5ATMA1

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149,28 kr

(exkl. moms)

186,60 kr

(inkl. moms)

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  • Dessutom levereras 1 000 enhet(er) från den 29 december 2025
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Enheter
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Per förpackning*
5 - 2029,856 kr149,28 kr
25 - 4525,088 kr125,44 kr
50 - 12023,588 kr117,94 kr
125 - 24521,772 kr108,86 kr
250 +20,294 kr101,47 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
220-7378
Tillv. art.nr:
IPB031N08N5ATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

80V

Package Type

TO-263

Series

OptiMOS 3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.1mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS 5 80V industrial power MOSFET IPB031N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.

Optimized for synchronous rectification

Ideal for high switching frequency

Output capacitance reduction of up to 44%

R DS(on) reduction of up to 44%

Highest system efficiency

Reduced switching and conduction losses

Less paralleling required

Increased power density

Low voltage overshoot

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