Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 82 A, 80 V Enhancement, 8-Pin TDSON BSC061N08NS5ATMA1

RS-artikelnummer:: 220-7355
Tillv. art.nr:: BSC061N08NS5ATMA1
Tillverkare / varumärke:: Infineon

Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 82 A, 80 V Enhancement, 8-Pin TDSON BSC061N08NS5ATMA1

Mängdrabatt möjlig

Antal (1 förpackning med 10 enheter)*

178,58 kr

(exkl. moms)

223,22 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

I lager

Dessutom levereras 4 970 enhet(er) från den 29 december 2025

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Enheter	Per enhet	Per förpackning*
10 - 40	17,858 kr	178,58 kr
50 - 90	16,968 kr	169,68 kr
100 - 240	16,251 kr	162,51 kr
250 - 490	15,523 kr	155,23 kr
500 +	14,47 kr	144,70 kr

*vägledande pris

RS-artikelnummer:: 220-7355
Tillv. art.nr:: BSC061N08NS5ATMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	82A
	Maximum Drain Source Voltage Vds	80V
	Package Type	TDSON
	Series	OptiMOS 3
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	6.1mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	27nC
	Maximum Power Dissipation Pd	74W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	150°C
	Height	1.2mm
	Width	6.1 mm
	Length	5.35mm
	Standards/Approvals	No
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 82A
	Maximum Drain Source Voltage Vds 80V
	Package Type TDSON
	Series OptiMOS 3
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 6.1mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 27nC
	Maximum Power Dissipation Pd 74W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 150°C
	Height 1.2mm
	Width 6.1 mm
	Length 5.35mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - BSC061N08NS5ATMA1

The Infineon Infineon's OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.

Optimized for high performance SMPS ,e.g. sync.rec.

100%avalanchetested

Superior thermal resistance

N-channel

QualifiedaccordingtoJEDEC1)for target applications

Pb-free lead plating; RoHS compliant

Halogen-freeaccordingtoIEC61249-2-21

Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 82 A, 80 V Enhancement, 8-Pin TDSON BSC061N08NS5ATMA1

GRATIS leverans för online beställningar över 500,00 kr

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