Infineon HEXFET Type N-Channel MOSFET & Diode, 270 A, 40 V Enhancement, 3-Pin TO-263
- RS-artikelnummer:
- 220-7342
- Tillv. art.nr:
- AUIRF2804STRL
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 800 enheter)*
22 370,40 kr
(exkl. moms)
27 963,20 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 4 800 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 800 + | 27,963 kr | 22 370,40 kr |
*vägledande pris
- RS-artikelnummer:
- 220-7342
- Tillv. art.nr:
- AUIRF2804STRL
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 270A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.65 mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 270A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 9.65 mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Height 4.83mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon offers a wide range of 20V-40V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages to meet a range of needs and achieving RDS(on) down to 0.6mΩ.The new OptiMOS 6 and Optimos5 40V benchmark MOSFET technology enables low conduction losses (best in Class RDSon performance), low switching losses (improved switching behaviour), improved diode recovery and EMC behaviour. This MOSFET technology is used in the most advanced and innovative packages in order to reach the best product performances and quality. For ultimate design flexibility, automotive-qualified MOSFETs are available in a variety of packages to meet a range of needs. Infineon offer customers a steady stream of improvements in current capability, switching behaviour, reliability, package size and overall quality. The newly developed integrated half-bridge is an innovative and cost efficient package solution for motor drive and body applications.
Advanced process technology
Ultra-low on-resistance
175°C operating temperature
Fast switching
Repetitive avalanche allowed up to Tjmax
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