Infineon CoolMOS Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-220

Antal (1 rör med 50 enheter)*

603,35 kr

(exkl. moms)

754,20 kr

(inkl. moms)

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  • Dessutom levereras 600 enhet(er) från den 29 december 2025
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50 +12,067 kr603,35 kr

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RS-artikelnummer:
219-6010
Tillv. art.nr:
IPP80R360P7XKSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

800V

Series

CoolMOS

Package Type

TO-220

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

30nC

Maximum Power Dissipation Pd

84W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

4.57mm

Width

15.95 mm

Length

10.36mm

Standards/Approvals

No

Automotive Standard

No

The Infineon 800V CoolMOS P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.

Easy to drive and to design-in

Better production yield by reducing ESD related failures

Less production issues and reduced field returns

Easy to select right parts for fine tuning of designs

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