Infineon CoolMOS Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin TO-220
- RS-artikelnummer:
- 219-6008
- Tillv. art.nr:
- IPP80R1K4P7XKSA1
- Tillverkare / varumärke:
- Infineon
Antal (1 rör med 50 enheter)*
229,25 kr
(exkl. moms)
286,55 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 250 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 + | 4,585 kr | 229,25 kr |
*vägledande pris
- RS-artikelnummer:
- 219-6008
- Tillv. art.nr:
- IPP80R1K4P7XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 32W | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.57mm | |
| Width | 15.95 mm | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 32W | ||
Maximum Operating Temperature 150°C | ||
Height 4.57mm | ||
Width 15.95 mm | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Automotive Standard No | ||
The Infineon 800V CoolMOS P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.
Easy to drive and to design-in
Better production yield by reducing ESD related failures
Less production issues and reduced field returns
Easy to select right parts for fine tuning of designs
relaterade länkar
- Infineon CoolMOS Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 IPP80R1K4P7XKSA1
- Infineon CoolMOS Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 IPP80R360P7XKSA1
- Infineon CoolMOS Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 IPAN80R280P7XKSA1
- Infineon CoolMOS C3 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220