STMicroelectronics SCTH40N Type N-Channel MOSFET, 33 A, 1200 V Enhancement, 7-Pin H2PAK SCTH40N120G2V-7
- RS-artikelnummer:
- 219-4222
- Tillv. art.nr:
- SCTH40N120G2V-7
- Tillverkare / varumärke:
- STMicroelectronics
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162,74 kr
(exkl. moms)
203,42 kr
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Enheter | Per enhet |
|---|---|
| 1 - 4 | 162,74 kr |
| 5 - 9 | 154,67 kr |
| 10 - 24 | 150,08 kr |
| 25 - 49 | 146,38 kr |
| 50 + | 142,58 kr |
*vägledande pris
- RS-artikelnummer:
- 219-4222
- Tillv. art.nr:
- SCTH40N120G2V-7
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCTH40N | |
| Package Type | H2PAK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 105mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Maximum Power Dissipation Pd | 250W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.4mm | |
| Width | 4.8 mm | |
| Height | 15.25mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCTH40N | ||
Package Type H2PAK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 105mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Maximum Power Dissipation Pd 250W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.4mm | ||
Width 4.8 mm | ||
Height 15.25mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
AEC-Q101 qualified
Very high operating junction temperature capability (TJ = 175 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
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