Infineon HEXFET Type N-Channel MOSFET, 23 A, 30 V TO-252 IRLR2703TRPBF
- RS-artikelnummer:
- 218-3128
- Tillv. art.nr:
- IRLR2703TRPBF
- Tillverkare / varumärke:
- Infineon
Antal (1 förpackning med 25 enheter)*
56,40 kr
(exkl. moms)
70,50 kr
(inkl. moms)
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 + | 2,256 kr | 56,40 kr |
*vägledande pris
- RS-artikelnummer:
- 218-3128
- Tillv. art.nr:
- IRLR2703TRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 341W | |
| Typical Gate Charge Qg @ Vgs | 162nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.31 mm | |
| Length | 15.87mm | |
| Height | 20.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 341W | ||
Typical Gate Charge Qg @ Vgs 162nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 5.31 mm | ||
Length 15.87mm | ||
Height 20.7mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon HEXFET series N-channel power MOSFET. It utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This MOSFET is designed for surface mounting using vapour phase, infrared, or wave soldering techniques.
Ultra Low On-Resistance
Fast Switching
Fully Avalanche Rated
Lead free
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