Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 13 A, 800 V, 3-Pin TO-247 IPW80R360P7XKSA1
- RS-artikelnummer:
- 218-3092
- Tillv. art.nr:
- IPW80R360P7XKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
125,23 kr
(exkl. moms)
156,54 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- 230 enhet(er) levereras från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 25,046 kr | 125,23 kr |
| 25 - 45 | 22,544 kr | 112,72 kr |
| 50 - 120 | 21,038 kr | 105,19 kr |
| 125 - 245 | 19,55 kr | 97,75 kr |
| 250 + | 18,296 kr | 91,48 kr |
*vägledande pris
- RS-artikelnummer:
- 218-3092
- Tillv. art.nr:
- IPW80R360P7XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | 800V CoolMOS P7 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 84W | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Width | 5.21 mm | |
| Height | 21.1mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series 800V CoolMOS P7 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 84W | ||
Maximum Operating Temperature 150°C | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Width 5.21 mm | ||
Height 21.1mm | ||
Automotive Standard No | ||
The Infineon 800V CoolMOS™ P7 N-channel power MOSFET. It is suitable for hard and soft switching flyback topologies for LED Lighting, low power Chargers and Adapters, Audio, AUX power and industrial power.
Best-in-class performance
Integrated Zener Diode ESD protection
Fully optimized portfolio
relaterade länkar
- Infineon 800V CoolMOS P7 Type N-Channel MOSFET 800 V, 3-Pin TO-247
- Infineon 800V CoolMOS P7 MOSFET 800 V, 3-Pin PG-TO251-3
- Infineon 800V CoolMOS P7 MOSFET 800 V, 3-Pin PG-TO251-3 IPU80R1K4P7AKMA1
- Infineon 800V CoolMOS P7 Type N-Channel MOSFET 800 V, 3-Pin TO-220
- Infineon 800V CoolMOS P7 Type N-Channel MOSFET 800 V, 3-Pin TO-220 IPP80R1K2P7XKSA1
- Infineon 800V CoolMOS P7 Type N-Channel MOSFET 800 V N, 3-Pin TO-220
- Infineon 800V CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Infineon 800V CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252