Infineon OptiMOS 3 Type N-Channel MOSFET, 73 A, 80 V N, 3-Pin TO-252 IPD096N08N3GATMA1
- RS-artikelnummer:
- 218-3038
- Tillv. art.nr:
- IPD096N08N3GATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 15 enheter)*
170,265 kr
(exkl. moms)
212,835 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 18 maj 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 15 - 60 | 11,351 kr | 170,27 kr |
| 75 - 135 | 10,775 kr | 161,63 kr |
| 150 - 360 | 10,327 kr | 154,91 kr |
| 375 - 735 | 9,879 kr | 148,19 kr |
| 750 + | 9,191 kr | 137,87 kr |
*vägledande pris
- RS-artikelnummer:
- 218-3038
- Tillv. art.nr:
- IPD096N08N3GATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 73A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS 3 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9.6mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 100W | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 73A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS 3 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9.6mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 100W | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 2.41mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Automotive Standard No | ||
The Infineon N-Channel Power MOSFET. This MOSFET is ideal for high frequency switching applications.
Optimized technology for DC/DC converters
N-channel, normal level
100% avalanche tested
Pb-free plating; RoHS compliant
relaterade länkar
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V N, 3-Pin TO-252
- Infineon OptiMOS-TM3 Type N-Channel MOSFET 80 V N, 3-Pin TO-252
- Infineon OptiMOS-TM3 Type N-Channel MOSFET 80 V N, 3-Pin TO-252 IPD135N08N3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IPD082N10N3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 40 V N, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 40 V N, 8-Pin TDSON BSC059N04LSGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
