Infineon Dual N Channel Mosfet HEXFET 2 Type N-Channel MOSFET, 5.1 A, 55 V Enhancement, 8-Pin SO-8 IRF7341GTRPBF

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10 - 4013,149 kr131,49 kr
50 - 9012,488 kr124,88 kr
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250 - 49011,435 kr114,35 kr
500 +10,64 kr106,40 kr

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Förpackningsalternativ:
RS-artikelnummer:
217-2603
Tillv. art.nr:
IRF7341GTRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5.1A

Maximum Drain Source Voltage Vds

55V

Package Type

SO-8

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

29nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2.4W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Transistor Configuration

Dual N Channel Mosfet

Height

1.5mm

Width

4 mm

Length

5mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The Infineon HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

Advanced Process Technology

Dual N-Channel MOSFET

Ultra Low On-Resistance

175°C Operating Temperature

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

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