Infineon IPN Type N-Channel MOSFET, 4 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R1K4P7SATMA1
- RS-artikelnummer:
- 217-2546
- Tillv. art.nr:
- IPN70R1K4P7SATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 50 enheter)*
287,00 kr
(exkl. moms)
359,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- 3 000 enhet(er) levereras från den 19 mars 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 50 - 50 | 5,74 kr | 287,00 kr |
| 100 - 200 | 4,42 kr | 221,00 kr |
| 250 - 450 | 4,133 kr | 206,65 kr |
| 500 - 1200 | 3,846 kr | 192,30 kr |
| 1250 + | 3,559 kr | 177,95 kr |
*vägledande pris
- RS-artikelnummer:
- 217-2546
- Tillv. art.nr:
- IPN70R1K4P7SATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | SOT-223 | |
| Series | IPN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 6.2W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.7 mm | |
| Height | 1.8mm | |
| Length | 6.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type SOT-223 | ||
Series IPN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 6.2W | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Width 3.7 mm | ||
Height 1.8mm | ||
Length 6.7mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.
Best-fit performance superjunction technology
Cost-effective package solution
Best-in-class price/performance ratio
relaterade länkar
- Infineon IPN Type N-Channel MOSFET 700 V Enhancement, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 700 V Enhancement, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 700 V Enhancement, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 700 V Enhancement, 3-Pin SOT-223 IPN70R750P7SATMA1
- Infineon IPN Type N-Channel MOSFET 700 V Enhancement, 3-Pin SOT-223 IPN70R450P7SATMA1
- Infineon IPN Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-223 IPN60R360P7SATMA1