Infineon IPD Type N-Channel MOSFET, 2 A, 800 V Enhancement, 3-Pin TO-252

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15 572,50 kr

(exkl. moms)

19 465,00 kr

(inkl. moms)

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2500 +6,229 kr15 572,50 kr

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RS-artikelnummer:
217-2531
Tillv. art.nr:
IPD80R2K7C3AATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.7Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

42W

Typical Gate Charge Qg @ Vgs

12nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

2.41mm

Width

6.22 mm

Length

6.73mm

Automotive Standard

AEC-Q101

The Infineon CoolMOS™ C3A technology was designed to meet the growing demands of higher system voltages in the area of electric vehicles, such as PHEVs and BEV.

Best-in-class quality and reliability

Higher breakdown voltage

High peak current capability

Automotive AEC Q101 qualified

Green package (RoHS compliant)

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