Infineon CoolMOS Type N-Channel MOSFET, 7.2 A, 650 V N, 3-Pin TO-220
- RS-artikelnummer:
- 217-2486
- Tillv. art.nr:
- IPA65R1K0CEXKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 50 enheter)*
202,25 kr
(exkl. moms)
252,80 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 650 enhet(er) från den 19 januari 2026
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 - 50 | 4,045 kr | 202,25 kr |
| 100 - 200 | 3,936 kr | 196,80 kr |
| 250 - 450 | 3,833 kr | 191,65 kr |
| 500 - 1200 | 3,734 kr | 186,70 kr |
| 1250 + | 3,64 kr | 182,00 kr |
*vägledande pris
- RS-artikelnummer:
- 217-2486
- Tillv. art.nr:
- IPA65R1K0CEXKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.2A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 68W | |
| Typical Gate Charge Qg @ Vgs | 15.3nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.65mm | |
| Width | 4.9 mm | |
| Height | 29.75mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.2A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 68W | ||
Typical Gate Charge Qg @ Vgs 15.3nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.65mm | ||
Width 4.9 mm | ||
Height 29.75mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Extremely low losses due to very low FOMRds on*Qg and Eoss
Very high commutation ruggedness
Easy-to-use/drive
Pb-free plating, Halogen free mold compound
Qualified for standard grade applications
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