Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 35 A, 60 V Enhancement, 8-Pin PDFN56 TSM220NB06LCR

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312,70 kr

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390,875 kr

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25 - 2512,508 kr312,70 kr
50 - 7512,275 kr306,88 kr
100 - 22511,267 kr281,68 kr
250 - 97511,057 kr276,43 kr
1000 +10,268 kr256,70 kr

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Förpackningsalternativ:
RS-artikelnummer:
216-9704
Tillv. art.nr:
TSM220NB06LCR
Tillverkare / varumärke:
Taiwan Semiconductor
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Brand

Taiwan Semiconductor

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

60V

Series

TSM025

Package Type

PDFN56

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

23nC

Maximum Power Dissipation Pd

68W

Maximum Operating Temperature

175°C

Width

4.2 mm

Height

1.1mm

Length

6.2mm

Standards/Approvals

IEC 61249-2-21, RoHS, WEEE

Automotive Standard

No

The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested

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