Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 51 A, 40 V Enhancement, 8-Pin PDFN56 TSM110NB04LCR
- RS-artikelnummer:
- 216-9685
- Tillv. art.nr:
- TSM110NB04LCR
- Tillverkare / varumärke:
- Taiwan Semiconductor
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
312,70 kr
(exkl. moms)
390,875 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Håller på att utgå
- Slutlig(a) 4 625 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 25 | 12,508 kr | 312,70 kr |
| 50 - 75 | 12,275 kr | 306,88 kr |
| 100 - 225 | 11,267 kr | 281,68 kr |
| 250 - 975 | 11,057 kr | 276,43 kr |
| 1000 + | 10,268 kr | 256,70 kr |
*vägledande pris
- RS-artikelnummer:
- 216-9685
- Tillv. art.nr:
- TSM110NB04LCR
- Tillverkare / varumärke:
- Taiwan Semiconductor
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PDFN56 | |
| Series | TSM025 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 68W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.2mm | |
| Height | 1.1mm | |
| Width | 5.2 mm | |
| Standards/Approvals | RoHS/WEEE | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PDFN56 | ||
Series TSM025 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 68W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.2mm | ||
Height 1.1mm | ||
Width 5.2 mm | ||
Standards/Approvals RoHS/WEEE | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for Metal Oxide Semiconductor Field-Effect Transistors. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
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